Ultra-junction MOSFET portfolio in SMPD-X package expanded

Littelfuse, Inc. has released the MMIX1T500N20X4 X4-Class Ultra-Junction Power MOSFET. This 200V, 480A N-channel MOSFET features an extremely low on-state resistance (RDS(on)) of just 1.99mΩ, facilitating superior conduction efficiency, simplified thermal management, and improved system reliability in power-dense designs.

The device uses a high-performance, ceramic-based, isolated SMPD-X package with topside cooling for optimal thermal management. Compared with existing state-of-the-art X4-Class MOSFET solutions, the device delivers up to 2× higher current ratings and as much as 63% lower RDS(on), allowing engineers to consolidate multiple paralleled low-current devices into a single high-current solution.

Features and benefits include:

• 200V blocking voltage, ultra-low RDS(on) of 1.99mΩ for minimised conduction losses.
• High current capability (ID = 480A) reduces the number of parallel devices needed.
• Compact SMPD-X isolated package with 2500V isolation and improved thermal resistance (Rth(j-c) = 0.14C/W).
• Low gate charge (Qg = 535nC) decreases gate drive power requirements.
• Simplified thermal management with topside-cooled packaging.

Together, these features supply higher power density, reduced component count, and easier assembly, resulting in more efficient, reliable, and cost-effective system designs.

The MMIX1T500N20X4 is ideal for DC load switches, battery energy storage systems, industrial and process power supplies, industrial charging infrastructure, and drones and VTOL platforms.

“The new devices enable designers to consolidate multiple paralleled low-current devices into a single high-current device, simplifying the design and reducing component count,” said Antonio Quijano, product marketing analyst at Littelfuse. “This enhances system reliability, streamlines gate driver implementation, and increases both power density and PCB area efficiency.”