Superjunction power MOSFET offers optimised gate design in a compact package

Toshiba Electronics Europe GmbH has launched a 600V N-channel superjunction power MOSFET in the DTMOSVI 600V process, housed in a compact DFN8×8 package. The TK057V60Z offers a drain-source voltage (VDSS) of 600V with a drain current (ID) capability up to 40A. The typical drain-source on-resistance (RDS(ON)) is as low as 0.047Ω (0.057Ω max.), and the typical gate drain charge (Qgd) can be as low as 15nC. The high-efficiency device and compact package maximise power density in industrial equipment. Applications include SMPS for data centre servers, UPS, and photovoltaic power conditioners.

In the series, which includes the TK057V60Z, the company has optimised the gate design and manufacturing process to attain approximately a 36% reduction in the FoM, defined as RDS(ON) x Qg, and approximately a 52% reduction in RDS(ON) x Qdg, compared to the existing generation DTMOSIV-H series with the same voltage rating. These improvements reduce conduction, drive, and switching losses, resulting in notable efficiency gains in power supply circuits. Furthermore, adopting the small surface-mount DFN8×8 package allows engineers to decrease the size of their end equipment. A Kelvin source pin enables proper gate control and helps avoid the impact of parasitic inductance at the power source pin.

The company offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which quickly verifies circuit function, highly accurate G2 SPICE models are now available that accurately reproduce transient characteristics.