28-11-2025 | ROHM Semiconductor | Power
ROHM has developed the 100V power MOSFET - RS7P200BM - achieving industry-leading SOA in a 5060-size (5mm × 6mm) package. This product is excellent for hot-swap circuits in AI servers powered by 48V power supplies, as well as for industrial power supplies that require battery protection.
The rapid evolution and widespread adoption of AI technologies have increased demand for stable operation and improved power efficiency in servers equipped with generative AI and high-performance GPUs. Particularly in hot-swap circuits, power MOSFETs with wide SOAs are vital for handling inrush current and overload conditions, ensuring stable operation. Furthermore, in data centres and AI servers, the transition to 48V power supplies, which deliver superior power conversion efficiency, is advancing amid efforts to conserve energy. This requires the development of high-voltage, high-efficiency power supply circuits capable of meeting these demands.
Therefore, the company has expanded its line-up of 100V power MOSFETs, ideal for hot-swap circuits in AI servers, to meet market demand. The new RS7P200BM adopts a compact DFN5060-8S (5060 size) package, enabling even higher-density mounting than the AI server power MOSFET ‘RY7P250BM’ in the DFN8080-8S (8mm × 8mm) package, which the company released in May 2025.
The new product attains a low on-resistance (RDS(on)) of 4mΩ (conditions: VGS=10V, ID=50A, Ta=25°C) while maintaining a wide SOA of 7.5A at a pulse width of 10ms and 25A at 1ms under operating conditions of VDS=48V. This balance of low on-resistance and wide SOA, which is often a trade-off, helps suppress heat generation during operation, thereby improving server power supply efficiency, lowering cooling load, and lowering electricity costs.
Application Examples include 48V system AI servers and data centre power hot-swap circuits; 48V system industrial power supplies; battery-powered industrial equipment such as AGVs; and UPS and emergency power systems.