Seventh generation eGaN device delivers up to 3× better performance than silicon MOSFETs

Efficient Power Conversion (EPC) has started volume production of the EPC2366, the first of its seventh generation (Gen 7) eGaN family of power transistors.

This seventh-generation platform delivers a new state-of-the-art in transistor performance. The device delivers up to 3× better performance than equivalent silicon MOSFETs. With a typical RDS(on) of 0.84mΩ and a highly optimised RDS(on) × QG FoM) <12mΩ*nC, it simultaneously cuts conduction and switching losses while enhancing thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives.

It supports drain-to-source voltages up to 40V and transient voltages up to 48V, with continuous drain currents up to 88A and pulsed currents of 360A, making it ideal for the most demanding power systems.

The device is thermally optimised for high power density thanks to its small 3.3mm × 2.6mm PQFN package with a thermal resistance from the junction to the case of 0.6C/W.

According to Alex Lidow, CEO and co-founder of EPC: “We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance. The 40V, EPC2366, is the first of this family to enter mass production. However, EPC is sampling seventh-generation 25V and 15V transistors now and expects more mass production transitions in the first half of 2026.”

To accelerate design-in and evaluation, the company also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, supplying engineers a reference platform to assess performance in real-world applications.