Power MOSFET for data centre, AI and industrial applications

Mouser Electronics, Inc. now offers the new RY7P250BM power MOSFET from ROHM Semiconductor. The device is optimised for hot-swap circuits in 48V power systems used in AI servers, data centres, industrial equipment, and energy storage applications.

As the power efficiency and current demands of generative AI and high-performance GPUs continue to grow, this latest MOSFET offers a wide SOA that allows it to withstand higher voltages while protecting against damaging inrush currents and overloads. Delivering 16A at 10ms and 50A at 1ms, it ensures stable performance under heavy loads that far surpass the limits of conventional MOSFETs, greatly improving overall system reliability and efficiency.

The RY7P250BM also serves as a drop-in replacement for existing designs, permitting safe module swaps while systems remain powered on. Features include a 100V drain-source voltage (VDSS), ±300A drain current (ID), and 340W power dissipation (PD), all housed in a compact 8080-size package. Also, the MOSFET achieves an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25C), approximately 18% lower than conventional 2.28mΩ wide-SOA 100V MOSFETs of the same size, minimising both power loss and heat generation in hot-swap controller and AI server applications.