New generation of high-efficiency IGBT series for solar and energy storage

Magnachip Semiconductor Corporation has launched its new series of IGBTs designed for solar inverters and industrial ESS, further strengthening its position in the high-efficiency power semiconductor market.

The newly introduced 650V and 1200V new Generation Discrete IGBT products are designed for use in solar inverters and ESS applications. By significantly decreasing the cell pitch from the previous generation, the company has achieved a substantial increase in current capacity. In addition, the improved Reverse Bias Safe Operating Area (RBSOA) helps to ensure stable and reliable performance under harsh high-voltage and high-current conditions. The products are available in standard TO-247 and high-capacity TO-247 Plus packages, supplying customers with design flexibility for a wide range of applications.

The company already supplies IGBT products to major domestic and international solar inverter manufacturers, earning recognition for high product quality and advanced technology. With this new product launch, it is expanding its portfolio to cover a wide capacity range ­­­from residential inverters to industrial systems up to 150kW, allowing customers to select suitable products for their operating environment

The new generation IGBTs employ Advanced Field Stop Trench technology, with improved design and refined process technology compared to the previous generation. Specifically, the cell pitch has been reduced by approximately 40%, greatly increasing current capacity within the same die area. Furthermore, RBSOA, which defines the semiconductor's safe operating limits, has been improved by over 30%, ensuring robust stability under high-voltage and high-current conditions. This makes it suitable for a wider range of power applications.

The company plans to further expand its product lineup in the first half of 2026 by introducing a high-current series rated up to 650V 150A, as well as new 750V products. The company also plans to add the 'TO-247-4Lead' package, featuring a Kelvin pin for improved switching efficiency, further enhancing its IGBT lineup. This will enable it to offer a broader range of design options for customers in the solar and ESS markets, which are trending toward higher capacity and efficiency.

"This new generation IGBT series enhances efficiency and reliability through refined process technologies," said Hyuk Woo, CTO of Magnachip. "Building on our market-proven technology and production capabilities, we will continue to expand our solution lineup to better address diverse customer needs."