MRAM family with high-reliability devices for multiple applications

Everspin Technologies, Inc. has released its newest high-reliability additions to the PERSYST MRAM product line: the EM064LX HR and EM128LX HR devices. Designed for extreme operating environments, these new xSPI MRAM products provide the industry's most robust combination of endurance, temperature performance and data retention for aerospace, defence, automotive and high-end industrial applications.

These newest additions extend the company's leadership in non-volatile memory by delivering AEC-Q100 Grade 1 qualification for operation from -40C to +125C. Each device undergoes a 48-hour burn-in process and provides 10-year data retention at 125C, ensuring predictable performance even under the most demanding conditions. With 64- and 128-megabit densities achieving 9MB/sec read and write bandwidth, sustained for over a decade, the devices are built for systems that cannot risk data loss or degradation.

The EM064LX device underwent independent radiation testing at the Berkeley Accelerator Space Effects (BASE) Facility at Lawrence Berkeley National Laboratory under a NASA Jet Propulsion Laboratory program. The tests validated its high-reliability characteristics, showing SEL events up to an LET of 61MeV-cm²/mg at ambient temperature. The EM064LX HR and EM128LX HR share the same design architecture and high-reliability specifications, supporting consistent performance across both devices.

"Our customers design systems that must perform without compromise in the harshest environments," says Sanjeev Aggarwal, president and CEO of Everspin Technologies. "EM064LX and EM128LX family of products offer the most reliable and durable non-volatile memory where density and total bandwidth are key requirements. These solutions demonstrate Everspin's ongoing commitment to supporting mission-critical designs that rely on memory performance and reliability under extreme conditions."

The new solutions feature a QSPI supporting 133MHz single transfer rate and 90MHz dual transfer rate operation, delivering high bandwidth for data-intensive applications while maintaining the deterministic performance MRAM is known for. These capabilities make the EM064LX HR and EM128LX HR family of products excellent for systems needing secure, persistent memory where bandwidth and reliability are equally important.

Key Benefits of the PERSYST EMxxLX High-Reliability MRAM:

• AEC-Q100 Grade 1 qualified, -40C to +125C operating range
• 10-year data retention at 125C with unlimited read/write endurance for 10 years
• 48-hour burn-in for added reliability margin
• Industry-standard QSPI interface and packages for design flexibility
• Proven MRAM technology backed by independent testing and field validation