Industry-first Gen6 DDR5 registered clock driver sets performance benchmark

Renesas Electronics Corporation has delivered the industry’s first sixth-generation RCD for DDR5 RDIMMs. The new RCD is the first to achieve a data rate of 9600MT/s, surpassing the industry standard. This breakthrough marks a notable leap from the 8800MT/s performance of Renesas’ Gen5 RCD, setting a new standard for memory interface performance in data centre servers.

Key features:

• 10% Bandwidth Increase over Renesas’ Gen5 RCD (9600 MT/s versus 8800 MT/s)
• Backward Compatibility with Gen5 Platforms: Provides a seamless upgrade path
• Enhanced Signal Integrity and Power Efficiency: Enables AI, HPC, and LLM workloads
• Expanded Decision Feedback Equalisation Architecture: Offers eight taps and 1.5mV granularity for superior margin tuning
• Decision Engine Signal Telemetry and Margining (DESTM): Improved system-level diagnostics provides real-time signal quality indication, margin visibility, and diagnostic feedback for higher speeds

The new DDR5 RDIMMs are required to keep pace with the ever-increasing memory bandwidth demands of AI, HPC and other data centre applications. Renesas has been instrumental in the design, development, and deployment of the new RDIMMs, collaborating with industry leaders, including CPU and memory providers, as well as end customers. Renesas is the leader in DDR5 RCDs, building on its legacy of signal integrity and power optimisation expertise.

“Explosive growth of generative AI is fueling higher SoC core count. This is driving unprecedented demand for memory bandwidth and capacity as a critical enabler of data centre performance,” said Sameer Kuppahalli, vice president of Memory Interface Division at Renesas. “Our sixth-generation DDR5 Registered Clock Driver demonstrates Renesas’ continued commitment to memory interface innovation, path-finding and delivering solutions to stay ahead of market demand.”

“Samsung has collaborated with Renesas across multiple generations of memory interface components, including the successful qualification of Gen5 DDR5 RCD and PMIC5030,” said Indong Kim, VP of DRAM Product Planning, Samsung Electronics. “We are now excited to integrate Gen6 RCD into our DDR5 DIMMs, across multiple SoC platforms to support the growing demands of AI, HPC, and other memory-intensive workloads.”

The RRG5006x Gen6 RCD is designed to satisfy the stringent demands of next-generation server platforms, offering robust performance, reliability, and scalability. The company is sampling the new RCD to select customers today, including all major DRAM suppliers.

The company will showcase its memory interface solutions at the SC25 conference, booth #4101, in St. Louis from November 16 to 21, 2025.