Enabling 48V hot swap in AI servers with new high SOA MOSFET

Alpha and Omega Semiconductor Limited has released its AOLV66935, a 100V High SOA MOSFET in an LFPAK 8x8 package. The company's latest MOSFET is an outstanding solution for 48V Hot-Swap architectures in AI servers. The power demands of AI servers are intensifying, primarily driven by increasing GPU/TPU performance. In addition to its wide SOA capability, the MOSFET features very low on-resistance to fulfil these performance, efficiency and reliability challenges.

The device employs the company's 100V AlphaSGT proprietary MOSFET technology that combines the advantages of trench technology for low on-resistance with high SOA capability. It has tested and characterised the SOA at 25C, as well as at higher operating conditions of 125C, providing system architects with confidence that the device will operate reliably under harsh conditions. Available in the company's state-of-the-art packaging, the MOSFET's LFPAK 8x8 gull-wing package is 60% smaller than the TO-263 (D2PAK) package. It also features advanced clip technology with a high current rating to handle high inrush current. Also, the copper clip and packaging technology used offer low thermal resistance for improved thermal management. The device is manufactured in IATF 16949-certified facilities, and its LFPAK 8x8 packaging meets AOI manufacturing requirements.

Furthermore, the AOLV66935 offers low power loss and reduced heat generation due to its leading low RDS(on) of 1.86mΩ at Vgs=10V. All the advanced features and high-current capabilities built into the MOSFET deliver the robustness needed for improved thermal cycling in harsh conditions, now essential in the latest AI server applications.

"To be able to perform the 48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional high SOA robustness and reliability. AOS designed the AOLV66935 High SOA MOSFET packaged in our advanced LFPAK 8x8 specifically to meet these demands. Plus, its exceptional low on-resistance significantly decreases conduction losses so fewer devices in parallel are required allowing designers to meet space limitations," said Peter H. Wilson, senior director of MOSFET product line at AOS.