8Gb DDR4 DRAM built on advanced 16nm process technology announced

Winbond Electronics Corporation has released its new 8Gb DDR4 DRAM, developed using its in-house advanced 16nm process technology, delivering higher speed, lower power consumption, and a better cost-efficiency solution for TV, servers, networking, industrial PCs, and embedded applications.

Despite the growing adoption of DDR5, many industries continue to rely on DDR4 for its stability and well-established ecosystem. The company's 8Gb DDR4 DRAM is designed for customers who depend on the DDR4 ecosystem but want faster data transfer and enhanced system competitiveness.

By employing its advanced 16nm manufacturing platform, the company achieves a notable performance leap with its new DDR4 generation. Compared to previous generations, the 16nm node offers smaller die sizes, higher wafer productivity, and improved power efficiency, enabling customers to integrate higher-density DRAM without increasing the package footprint. The refined process also enhances signal integrity and reduces leakage, enabling stable operation even at data rates up to 3600Mbps. This combination of higher speed, lower cost, and robust manufacturing maturity makes the 16nm DDR4 a compelling option for long-lifecycle industrial and embedded applications.

The device supports an industry-first data rate of up to 3600Mbps, surpassing DDR4 standards and enabling faster data transfer for high-speed computing applications. Built on the company's 16nm technology, the smaller die size increases capacity within the same package and helps reduce overall system cost.

With full in-house capabilities across design, 16nm process development, and manufacturing, the company ensures a stable supply chain for industrial and KGD customers, alongside dedicated after-sales support.

"DDR4 remains a vital technology for many markets, and our new 8Gb DDR4 solution ensures customers can continue to benefit from its strong ecosystem with even greater performance and efficiency," said Winbond. "By combining our 16nm expertise with high-speed capabilities, we are enabling customers to meet demanding computing requirements while lowering total system cost."

The company's 16nm process node marks a new benchmark in DDR4 manufacturing maturity, combining speed, scalability, and efficiency for long-lifecycle applications. Building on this platform, three additional products are already under development in the same 16nm process – CUBE, 8Gb LPDDR4, and 16Gb DDR4 – further expanding its next-generation memory portfolio.